A Recent Progress of Gate-Source over Lapping Line-TFET

Abstract

Tunnel field effect transistor (TFET) technology is unique of the prominent devices in low power applications. The band to band tunnel (BTBT) switching mechanism is what sets TFET apart from traditional MOSFET technology. It helps to reduce leakage currents. The major advantage is the Sub threshold slope (SS) smaller than 60mv/decade. We have demonstrated that the recently developed in various gate electrode structures of Line TFET (LTFET) technology in terms of performance and their superior current characteristics. Apart from this, a brief discussion on the design challenges of various gate structures and their possible solutions of structural improvement in LTFET.