High Switching Speed and Low Power Applications for Hetro Junction DGTFET
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Abstract
Tunnel field effect transistor (TFET) technology is unique of the prominent devices in low
power applications. The band to band tunnel (BTBT) switching mechanism is sets TFET apart
from traditional MOSFET technology. It helps to reduce leakage currents. The major
advantage is the Sub threshold slope (SS) smaller than 60mv/decade. Proposed model of hetro
junction double gate TFET (HJ-DGTFET) technology perform superior current characteristics
than conventional TFET and hetro junction single gate TFET device.
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