High Switching Speed and Low Power Applications for Hetro Junction DGTFET

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Publicado: Jan 19, 2023

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Ajaykumar Dharmireddy
Research schlor, GITAM Deemed to be university, Visakapatanam, Andhrapradesh
Sreenivasarao Ijjada
Asst.professor, GITAM Deemed to be university, Visakapatanam, Andhrapradesh
H.Sudhkar
Asst.professior Sir C.R.Reddy College of Engineering, Eluru, Andhrapradesh
I.Hemalatha
Asso.professor, Sir C.R.Reddy College of Engineering, Eluru ,Andhrapradesh
N.Lavanya
Asst.professiorSir C.R.Reddy College of Engineering, Eluru,Andhrapradesh

Resumen

Tunnel field effect transistor (TFET) technology is unique of the prominent devices in low
power applications. The band to band tunnel (BTBT) switching mechanism is sets TFET apart
from traditional MOSFET technology. It helps to reduce leakage currents. The major
advantage is the Sub threshold slope (SS) smaller than 60mv/decade. Proposed model of hetro
junction double gate TFET (HJ-DGTFET) technology perform superior current characteristics
than conventional TFET and hetro junction single gate TFET device.

Detalles del artículo

Número
Vol. 22 Núm. 01 (2023)
Sección
Articles